? semiconductor components industries, llc, 2011 january, 2011 ? rev. 12 1 publication order number: mjd243/d mjd243 (npn), mjd253 (pnp) complementary silicon plastic power transistor dpak ? 3 for surface mount applications designed for low voltage, low ? power, high ? gain audio amplifier applications. features ? collector ? emitter sustain ing voltage ? v ceo(sus) = 100 vdc (min) @ i c = 10 madc ? high dc current gain ? h fe = 40 (min) @ i c = 200 madc = 15 (min) @ i c = 1.0 adc ? lead formed for surface mount applications in plastic sleeves (no suffix) ? straight lead version in plastic sleeves (? ? 1? suffix) ? low collector ? emitter saturation voltage ? v ce(sat) = 0.3 vdc (max) @ i c = 500 madc = 0.6 vdc (max) @ i c = 1.0 adc ? high current ? gain ? bandwidth product ? f t = 40 mhz (min) @ i c = 100 madc ? annular construction for low leakage ? i cbo = 100 nadc @ rated v cb ? epoxy meets ul 94 v ? 0 @ 0.125 in ? esd ratings: human body model, 3b 8000 v machine model, c 400 v ? these are pb ? free packages dpak ? 3 case 369d style 1 4.0 a, 100 v, 12.5 w power transistor marking diagrams a = assembly location y = year ww = work week x = 4 or 5 g = pb ? free package dpak ? 3 case 369c style 1 http://onsemi.com ayww j2x3g 1 2 3 4 1 2 3 base collector emitter 4 ayww j253g see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information
mjd243 (npn), mjd253 (pnp) http://onsemi.com 2 maximum ratings rating symbol value unit ?????????????????????? ?????????????????????? collector ? base voltage ????? ????? ????? ????? ???? ???? ?????????????????????? ?????????????????????? ? emitter voltage ????? ????? ????? ????? ???? ???? ?????????????????????? ?????????????????????? ? base voltage ????? ????? ????? ????? ???? ???? ?????????????????????? ?????????????????????? ?????????????????????? ? continuous ? peak ????? ????? ????? ????? ????? ????? ???? ???? ???? ?????????????????????? ?????????????????????? ????? ????? ????? ????? ???? ???? ?????????????????????? ?????????????????????? c derate above 25 c ????? ????? ????? ????? ???? ???? c ?????????????????????? ?????????????????????? ?????????????????????? c (note 1) derate above 25 c ????? ????? ????? ????? ????? ????? ???? ???? ???? c ?????????????????????? ?????????????????????? ????? ????? ????? ????? ? 65 to + 150 ???? ???? c thermal characteristics characteristic symbol value unit ?????????????????????? ?????????????????????? ?????????????????????? thermal resistance, junction ? to ? case junction ? to ? ambient (note 2) ????? ????? ????? jc r ja ????? ????? ????? ???? ???? ???? c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. when surface mounted on minimum pad sizes recommended. ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? ??? ??? ??? ??? ???? ???? ????????????????????????????????? ????????????????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? collector ? emitter sustaining voltage (note 3) (i c = 10 madc, i b = 0) ????? ????? ????? ??? ??? ??? ??? ??? ??? ? ???? ???? ???? vdc ?????????????????????? ?????????????????????? ?????????????????????? c) ????? ????? ????? ??? ??? ??? ? ? ??? ??? ??? 100 100 ???? ???? ???? adc ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ? ??? ??? ??? 100 ???? ???? ???? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ??? ??? ??? ? ???? ???? ???? ?????????????????????? ?????????????????????? ?????????????????????? collector ? emitter saturation voltage (note 3) (i c = 500 madc, i b = 50 madc) (i c = 1.0 adc, i b = 100 madc) ????? ????? ????? ??? ??? ??? ? ? ??? ??? ??? 0.3 0.6 ???? ???? ???? ?????????????????????? ?????????????????????? ?????????????????????? ? emitter saturation voltage (note 3) (i c = 2.0 adc, i b = 200 madc) ????? ????? ????? ??? ??? ??? ? ??? ??? ??? 1.8 ???? ???? ???? ?????????????????????? ?????????????????????? ?????????????????????? ? emitter on voltage (note 3) (i c = 500 madc, v ce = 1.0 vdc) ????? ????? ????? ??? ??? ??? ? ??? ??? ??? 1.5 ???? ???? ???? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? current ? gain ? bandwidth product (note 4) (i c = 100 madc, v ce = 10 vdc, f test = 10 mhz) ????? ????? ??? ??? ??? ??? ? ???? ???? mhz ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ? ??? ??? ??? 50 ???? ???? ???? s, duty cycle 2%. 4. f t = ? h fe ?? f test .
mjd243 (npn), mjd253 (pnp) http://onsemi.com 3 25 25 t, temperature ( c) 0 50 75 100 125 150 15 10 t c 5 20 p d , power dissipation (watts) 2.5 0 1.5 1 t a 0.5 2 t c t a (surface mount) figure 1. power derating figure 2. active region maximum safe operating area 10 v ce , collector-emitter voltage (volts) 0.01 100 2 5 0.1 bonding wire limited thermally limited @ t c = 25 c (single pulse) second breakdown limited curves apply below rated v ceo 500 s dc 1 1ms 50 20 10 5 2 1 100 s i c , collector current (amps) 0.02 0.05 0.2 0.5 5ms there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 2 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 3. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. t, time (ms) 0.01 0.02 0.05 1 2 5 10 20 50 100 200 0.1 0.5 0.2 1 0.2 0.1 0.05 r(t), transient thermal r jc (t) = r(t) jc r jc = 10 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 resistance (normalized) 0.5 d = 0.5 0.05 0.3 0.7 0.07 0.03 0.02 0 (single pulse) figure 3. thermal response 0.1 0.02 0.01
mjd243 (npn), mjd253 (pnp) http://onsemi.com 4 i c , collector current (amp) i c , collector current (amp) h fe , dc current gain figure 4. dc current gain figure 5. ?on? voltages i c , collector current (amp) 200 500 0.06 0.1 0.4 4.0 0.04 100 70 50 20 0.2 5.0 1.0 2.0 0.6 25 c t j = 150 c -55 c i c , collector current (amp) 1.4 1.2 0.8 0.4 0 t j = 25 c v, voltage (volts) npn mjd243 pnp mjd253 100 200 70 50 30 20 2.0 h fe , dc current gain 25 c t j = 150 c -55 c v ce = 1.0 v v ce = 2.0 v v, voltage (volts) v ce(sat) v be @ v ce = 1.0 v 0 t j = 25 c v be(sat) @ i c /i b = 10 i c /i b = 10 v be @ v ce = 1.0 v v ce = 1.0 v v ce = 2.0 v 7.0 10 30 300 0.04 0.06 0.1 0.4 4.0 0.2 1.0 2.0 0.6 0.06 0.1 0.4 4.0 0.04 0.2 1.0 2.0 0.6 0.04 0.06 0.1 0.4 4.0 0.2 1.0 2.0 0.6 1.0 0.6 0.2 1.4 1.2 0.8 0.4 1.0 0.6 0.2 3.0 5.0 7.0 10 5.0 i c /i b = 10 v ce(sat) 5.0 v be(sat) @ i c /i b = 10 i c , collector current (amp) i c , collector current (amp) figure 6. temperature coefficients 0.04 vb for v be v , temperature coefficients (mv/ c) -1.0 -1.5 -2.0 -2.5 25 c to 150 c -55 c to 25 c v , temperature coefficients (mv/ c) +2.5 +2.0 +1.5 +1.0 0 -0.5 -1.0 -1.5 -2.0 +0.5 -2.5 *applies for i c /i b h fe/3 25 c to 150 c -55 c to 25 c 25 c to 150 c -55 c to 25 c 0.06 0.1 0.4 4.0 0.2 1.0 2.0 0.6 0.04 0.06 0.1 0.4 4.0 0.2 1.0 2.0 0.6 vb for v be * vc for v ce(sat)
mjd243 (npn), mjd253 (pnp) http://onsemi.com 5 figure 7. switching time test circuit +11 v 25 s 0 -9.0 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1.0% 51 r b and r c varied to obtain desired current levels d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma for pnp test circuit, reverse all polarities 1k i c , collector current (amps) v cc = 30 v i c /i b = 10 t j = 25 c t, time (ns) 500 300 200 100 50 t d 30 20 10 5 1 0.01 0.03 0.05 0.5 0.2 0.1 0.3 10 figure 8. turn ? on time 3 2 5 2 13 t r npn mjd243 pnp mjd253 0.02 10k i c , collector current (amps) 10 5k 3k 2k 1k 500 300 200 100 50 figure 9. turn ? off time t, time (ns) 30 20 0.01 0.03 0.05 0.5 0.2 0.02 0.1 0.3 10 5 2 13 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f v r , reverse voltage (volts) 10 100 100 200 50 figure 10. capacitance 70 50 20 10 7.0 5.0 3.0 1.0 c, capacitance (pf) 2.0 t j = 25 c c ib c ob mjd243 (npn) mjd253 (pnp) 30 npn mjd243 pnp mjd253 20 70 30 200 v r , reverse voltage (volts) 10 100 70 100 30 figure 11. capacitance 50 20 50 7 5 2 130 c, capacitance (pf) 3 t j = 25 c c ib c ob 20 10 70
mjd243 (npn), mjd253 (pnp) http://onsemi.com 6 ordering information device package type package shipping ? mjd243g dpak ? 3 (pb ? free) 369c 75 units / rail mjd243t4g dpak ? 3 (pb ? free) 369c 2500 / tape & reel mjd253 ? 1g dpak ? 3 (pb ? free) 369d 75 units / rail mjd253t4g dpak ? 3 (pb ? free) 369c 2500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mjd243 (npn), mjd253 (pnp) http://onsemi.com 7 package dimensions dpak ? 3 case 369c ? 01 issue d style 1: pin 1. base 2. collector 3. emitter 4. collector 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw
mjd243 (npn), mjd253 (pnp) http://onsemi.com 8 package dimensions dpak ? 3 (single gauge) case 369d ? 01 issue b style 1: pin 1. base 2. collector 3. emitter 4. collector 123 4 v s a k ? t ? seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ??? on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 mjd243/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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